Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

Solid-State Electronics

Volumn 71, Issue , 2012, Pages 25-29

  Osintsev, D ^a   Sverdlov, V ^a   Stanojevic Z ^a   Makarov, A ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Conductance; Current; Dresselhaus spin orbit interaction; Spin field effect transistor; Temperature; Tunneling magnetoresistance

Indexed keywords

CURRENT MODULATION; FERROMAGNETIC CONTACTS; GATE BIAS; HIGHER TEMPERATURES; INAS; LOW TEMPERATURES; ROOM TEMPERATURE; SEMICONDUCTOR CHANNELS; SILICON CHANNEL; SILICON FINS; SPIN FIELD-EFFECT TRANSISTORS; SPIN ORBIT INTERACTIONS; SPIN-FET; TEMPERATURE DEPENDENCE; TUNNELING MAGNETORESISTANCE;

ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); MAGNETIC FIELDS; MAGNETORESISTANCE; MODULATION; SILICON; TEMPERATURE; TRANSPORT PROPERTIES;

INDIUM ARSENIDE;

EID: 84858698031     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.10.015     Document Type: Conference Paper

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