Electrical transport and depletion region in dry-etched Si-based nanostructures

Semiconductor Science and Technology

Volumn 27, Issue 4, 2012, Pages

  Cardile, P ^a,b,c   Franzo G ^a   Krauss, T F ^c   Priolo, F ^a,b   O'Faolain, L ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c UNIVERSITY OF ST ANDREWS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; DOPING LEVELS; DRY ETCHING PROCESS; ELECTRICAL CONDUCTION; ELECTRICAL TRANSPORT; I-V MEASUREMENTS; NANO-STRUCTURED; SI-BASED; SILICON-ON-INSULATORS;

BORON; PHOTONIC CRYSTALS;

NANOSTRUCTURES;

EID: 84858393769     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/4/045016     Document Type: Article

References (21)

1. Krauss T F and De La Rue R M 1999 Prog. Quantum Electron. 23 51
2. Krauss T F, De La Rue R M and Brand S 1996 Nature 383 699
3. Joannopoulos J D, Villeneuve P R and Fan S 1997 Nature 386 143
4. Yoshie T, Sherer A, Hendrickson J, Khitrova G, Gibbs H M, Rupper G, Ell C, Shchekin O B and Deppe D G 2004 Nature 432 200
5. Corcoran B, Monat C, Grillet C, Moss D J, Eggleton B J, White T P, O'Faolain L and Krauss T F 2009 Nature Photon 3 206
6. Nomura M, Iwamoto S, Nishioka M, Ishida S and Arakawa I 2006 Appl. Phys. Lett. 89 161111
7. Strauf S, Hennessy K, Rakher M T, Choi Y-S, Badolato A, Andreani L C, Hu E L, Petroff P M and Bouwmeester D 2006 Phys. Rev. Lett. 96 127404
8. Altug H, Englund D and Vuckovic J 2006 Nature Phys. 2 484
9. Tanabe T, Kuramochi E, Taniyama H and Notomi M 2010 Opt. Lett. 35 3895
10. Park H, Kim S, Kwon S, Ju Y, Yang J, Baek J, Kim S and Lee Y 2004 Science 305 1444
11. Ellis B, Mayer M A, Shambat G, Sarmiento T, Harris J, Haller E E and Vuckovic J 2011 Nature Photon 5 297
12. Cardile P, Franz G, Lo Savio R, Galli M, Krauss T F, Priolo F and O'Faolain L 2011 Appl. Phys. Lett. 98 203506
13. Berrier A, Mulot M, Malm G, stling M and Anand S 2007 J. Appl. Phys. 101 123101
14. Ellis B, Sarmiento T, Mayer M, Zhang B, Harris J, Haller E E and Vuckovic J 2010 Appl. Phys. Lett. 96 181103
15. Dong P, Shafiiha R, Liao S, Liang H, Feng N-N, Feng D, Li G, Zheng X, Krishnamoorty A V and Asghari M 2010 Opt. Express 18 10941
16. Dong P et al 2009 Opt. Express 17 22484
17. Feng N-N et al 2010 Opt. Express 18 7994
18. Priolo F, Mannino G, Miccich̀ M, Privitera V, Napolitani E and Carnera A 1998 Appl. Phys. Lett. 72 3011
19. O'Faolain L, Yuan X, McIntyre D, Thoms S, Chong H, De La Rue R M and Krauss T F 2006 Electron. Lett. 42 1454
20. Ziegler J F, Biersack J P and Littmark U 1984 The Stopping and Range of Ions in Solids, Stopping and Ranges of Ions in Matter vol 1 (New York: Pergamon)
21. Vlasov Y A, O'Boyle M, Hamann H F and McNab S J 2005 Nature 438 65