Optoelectronic properties of chemically deposited Bi 2S 3 thin films and the photovoltaic performance of Bi 2S 3/P3OT solar cells

Solar Energy

Volumn 86, Issue 4, 2012, Pages 1017-1022

  Pineda, Edwin ^a   Nicho, Ma Elena ^b   Nair, P K ^a   Hu, Hailin ^a  

^a INSTITUTO DE ENERGÍAS RENOVABLES   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

Author keywords

Bismuth sulfide; Optoelectronic properties; Poly3 octylthiophene; Thin film solar cells

Indexed keywords

BISMUTH SULFIDE; CDS THIN FILMS; CHEMICAL DEPOSITION; DROP-CAST; ELECTRON ACCEPTOR; GLASS SUBSTRATES; GOLD FILM; OPTOELECTRONIC PROPERTIES; PHOTOVOLTAIC PERFORMANCE; POLY3-OCTYLTHIOPHENE; SOLAR CELL STRUCTURES; THIN FILM SOLAR CELLS; TIN DOPED INDIUM OXIDE;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; CHEMICAL BONDS; ELECTRONEGATIVITY; FILM PREPARATION; FILM THICKNESS; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SUBSTRATES; THIN FILMS; TIN; TOLUENE; TUNGSTEN; VAPOR DEPOSITION;

BISMUTH;

CHEMICAL COMPOSITION; FILM; MORPHOLOGY; PERFORMANCE ASSESSMENT; PHOTOVOLTAIC SYSTEM; SUBSTRATE;

EID: 84858152461     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2011.06.015     Document Type: Article

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