Photoemission and inverse-photoemission studies of Bi2Y3 (Y=S, Se, Te) semiconductors

Journal of Electron Spectroscopy and Related Phenomena

Volumn 101-103, Issue , 1999, Pages 677-680

  Ueda, Yoshifumi ^a   Furuta, Akihito ^b   Okuda, Hiroyuki ^b   Nakatake, Masashi ^b   Sato, Hitoshi ^b   Namatame, Hirofumi ^b   Taniguchi, Masaki ^b  

^a KURE NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Bi2Te3; Electronic structure; Photoemission; Thermoelectrics; V2(VI)3 semiconductor

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; ENERGY GAP; PHOTOEMISSION; SUBSTITUTION REACTIONS; THERMOELECTRICITY; ULTRAVIOLET SPECTROSCOPY;

INVERSE-PHOTOEMISSION SPECTROSCOPY (IPES); ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY (UPS);

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 0032595766     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0368-2048(98)00335-1     Document Type: Article

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