Increased yield and uniformity of vanadium dioxide nanobeam growth via two-step physical vapor transport process

Crystal Growth and Design

Volumn 12, Issue 3, 2012, Pages 1383-1387

  Kim, In Soo ^a   Lauhon, Lincoln J ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH DENSITY; LOCAL SOURCE; NUCLEATION DENSITIES; OXYGEN FLOW; PHYSICAL VAPOR TRANSPORT; SYNTHETIC APPROACH; VANADIUM DIOXIDE;

ASPECT RATIO; GROWTH (MATERIALS); MORPHOLOGY; NANOSHEETS; NUCLEATION; SEMICONDUCTOR INSULATOR BOUNDARIES; SUPERSATURATION; VANADIUM; VAPORS;

NANOWIRES;

EID: 84857974095     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg201488w     Document Type: Article

References (26)

1. Ahn, C. H. Science 2004, 303, 488-491
2. Kong, X. Y.; Wang, Z. L. Nano Lett. 2003, 3, 1625-1631
3. Dagotto, E. Rev. Mod. Phys. 1994, 66, 763-840
4. Kobayashi, K. I.; Kimura, T.; Sawada, H.; Terakura, K.; Tokura, Y. Nature 1998, 395, 677-680
5. Morin, F. J. Phys. Rev. Lett. 1959, 3, 34-36
6. Qazilbash, M. M.; Schafgans, A. A.; Burch, K. S.; Yun, S. J.; Chae, B. G.; Kim, B. J.; Kim, H. T.; Basov, D. N. Phys. Rev. B 2008, 77, 115121
7. Verleur, H. W.; Barker, A. S.; Berglund, C. N. Phys. Rev. 1968, 172, 788-798
8. Kim, H. T.; Chae, B. G.; Youn, D. H.; Maeng, S. L.; Kim, G.; Kang, K. Y.; Lim, Y. S. New J. Phys. 2004, 6
9. Hu, B.; Ding, Y.; Chen, W.; Kulkarni, D.; Shen, Y.; Tsukruk, V. V.; Wang, Z. L. Adv. Mater. 2010, 22, 5134-5139
10. Strelcov, E.; Lilach, Y.; Kolmakov, A. Nano Lett. 2009, 9, 2322-2326
11. Wu, J.; Gu, Q.; Guiton, B. S.; de Leon, N. P.; Ouyang, L.; Park, H. Nano Lett. 2006, 6, 2313-2317
12. Zhang, S.; Chou, J. Y.; Lauhon, L. J. Nano Lett. 2009, 9, 4527-4532
13. Cao, J.; Ertekin, E.; Srinivasan, V.; Fan, W.; Huang, S.; Zheng, H.; Yim, J. W. L.; Khanal, D. R.; Ogletree, D. F.; Grossman, J. C.; Wu, J. Nat. Nanotechnol. 2009, 4, 732-737
14. Wei, J.; Wang, Z.; Chen, W.; Cobden, D. H. Nat. Nanotechnol. 2009, 4, 420-424
15. Guiton, B. S.; Gu, Q.; Prieto, A. L.; Gudiksen, M. S.; Park, H. J. Am. Chem. Soc. 2005, 127, 498-499
16. Kim, M. H.; Lee, B.; Lee, S.; Larson, C.; Baik, J. M.; Yavuz, C. T.; Seifert, S. N.; Vajda, S.; Winans, R. E.; Moskovits, M.; Stucky, G. D.; Wodtke, A. M. Nano Lett. 2009, 9, 4138-4146
17. Strelcov, E.; Davydov, A. V.; Lanke, U.; Watts, C.; Kolmakov, A. ACS Nano 2011, 5, 3373-3384
18. Cheng, Y.; Wong, T. L.; Ho, K. M.; Wang, N. J. Cryst. Growth 2009, 311, 1571-1575
19. Sohn, J. I.; Joo, H. J.; Porter, A. E.; Choi, C.-J.; Kim, K.; Kang, D. J.; Welland, M. E. Nano Lett. 2007, 7, 1570-1574
20. Maeng, J.; Kim, T.; Jo, G.; Lee, T. Mater. Res. Bull. 2008, 43, 1649-1656
21. Lu, S. W.; Hou, L.; Gan, F. X. J. Mater. Sci. 1993, 28, 2169-2177
22. Cabrera, N.; Burton, W. K. Discuss. Faraday Soc. 1949, 40-48
23. Blakely, J. M.; Jackson, K. A. J. Chem. Phys. 1962, 37, 428-430
24. Morin, S. A.; Bierman, M. J.; Tong, J.; Jin, S. Science 2010, 328, 476-480
25. Koji, K. J. Phys. Chem. Solids 1967, 28, 1613-1621
26. Zhang, S.; Kim, I. S.; Lauhon, L. J. Nano Lett. 2011, 11, 1443-1447