The structure and growth mechanism of VO2 nanowires

Journal of Crystal Growth

Volumn 311, Issue 6, 2009, Pages 1571-1575

  Cheng, Y ^a   Wong, T L ^a   Ho, K M ^a   Wang, N ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A1. Crystal structure; A1. Nanostructure; A2. Growth from vapor; A2. Single crystal growth; B1. Nanomaterials; B1. Oxides

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC WIRE; GRAIN BOUNDARIES; HIGH RESOLUTION ELECTRON MICROSCOPY; MELTING; MELTING POINT; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOWIRES; SILICA; SINGLE CRYSTALS; SUBSTRATES; THERMAL EXPANSION; TRANSITION METALS; VANADIUM; VANADIUM ALLOYS; VANADIUM COMPOUNDS; VAPORS;

A1. CRYSTAL STRUCTURE; A1. NANOSTRUCTURE; A2. GROWTH FROM VAPOR; A2. SINGLE CRYSTAL GROWTH; B1. NANOMATERIALS; B1. OXIDES;

CRYSTAL STRUCTURE;

EID: 62549133552     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.002     Document Type: Article

References (25)

1. Sohn J.I., Joo H.J., Porter A.E., Choi C.J., Kim K., Kang D.J., and Welland M.E. Nano Lett. 7 (2007) 1570
2. Morin F.J. Phys. Rev. Lett. 3 (1959) 34
3. Elbaum L.K., Newns M.N., Zeng H., Dericke V., Sun J.Z., and Sandstorm R. Nature 431 (2004) 672
4. Vailova E., Hellmann I., Kataev V., Taschner C., Buchner B., and Klingeler R. Phys. Rev. B 73 (2006) 144417
5. Biermann S., Poteryaev A., Lichtenstein A.I., and Georges A. Phys. Rev. Lett. 94 (2005) 0246404
6. Qazilbash M.M., Brehm M., Chae B.-G., Ho P.-C., Andreev G.O., Kim B.-J., Yun S.J., Balatsky A.V., Maple M.B., Keilmann F., Kim H.-T., and Basov D.N. Science 318 (2007) 1750
7. Kim H.T., Chae B.G., Youn D.H., Kim G., and Kang K.Y. Appl. Phys. Lett. 86 (2005) 242101
8. Tsai K.Y., Wu F.H., Shieh H.P.D., and Chin T.S. Mater. Chem. Phys. 96 (2006) 331
9. Maaza M., Nemraoui O., Sella C., Beye A.C., and Baruch. Barak B. Opt. Commun. 254 (2005) 188
10. Wang H., Yi X., Chen S., and Fu X. Sensors Actuators A 122 (2005) 108
11. Guiton B.S., Gu Q., Prieto A.L., Gudiksen M.S., and Park H. JACS 127 (2005) 498
12. Liu J.F., Li Q.H., Wang T.H., Yu D.P., and Li Y.D. Angew. Chem. 43 (2004) 5048
13. Zhang K.F., Liu X., Su Z.X., and Li H.L. Mater. Lett. 61 (2007) 2644
14. Wagner R.S., and Ellis W.C. Appl. Phys. Lett. 4 (1964) 89
15. Pen Z.W., Dai Z.R., and Wang Z.L. Science 291 (2001) 1947
16. Dai Z.R., Pen Z.W., and Wang Z.L. Adv. Funct. Mater. 13 (2003) 9
17. Wang Z.L., Kong X.Y., and Zou J.M. Phys. Rev. Lett. 91 (2003) 185502
18. Hu J.Q., Li Q., Wong N.B., Lee C.S., and Lee S.T. Chem. Mater. 14 (2002) 1261
19. Xu C.X., and Sun X.W. Jpn. J. Appl. Phys. 42 (2003) 4949
20. Wang N., Zhang Y.F., Tang Y.H., Lee C.S., and Lee S.T. Appl. Phys. Lett. 73 (1998) 3902
21. Wang N., Tang Y.H., Zhang Y.F., Lee C.S., and Lee S.T. Phys. Rev. B 58 (1998) 16024
22. Wang N., Tang Y.H., Zhang Y.F., Lee C.S., and Lee S.T. Chem. Phys. Lett. 299 (1999) 237
23. Goodenough J.B. J. Solid State Chem. 3 (1971) 490
24. Griffiths C.H., and Eastwood H.K. J. Appl. Phys. 45 (1974) 2201
25. Guntersdorfer M. Solid-State Electron. 13 (1970) 355