A new approach for improving the silicon texturing process using gas-lift effect

Journal of Physics D: Applied Physics

Volumn 45, Issue 10, 2012, Pages

  Amouzgar, M ^a   Kahrizi, M ^a  

^a Dept of Electrical and Computer Engineering   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; ETCHING RATE; ETCHING TIME; GLASS PLATE; HYDROGEN BUBBLES; PUMPING MECHANISM; SILICON SURFACES; SURFACE-TEXTURING;

ETCHING; HYDROGEN; REFLECTION; TEXTURING;

SILICON WAFERS;

EID: 84857742461     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/10/105102     Document Type: Article

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