New polytypoid SnO 2(ZnO:Sn) m nanowire: Characterization and calculation of its electronic structure

Journal of Physical Chemistry C

Volumn 116, Issue 8, 2012, Pages 5009-5013

  Cao, Baobao ^a   Shi, Tingting ^b,d,e   Zheng, Shijian ^c   Ikuhara, Yumi H ^c   Zhou, Weilie ^a   Wood, David ^e   Al Jassim, Mowafak ^d   Yan, Yanfa ^b  

^a UNIVERSITY OF NEW ORLEANS   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

^c JAPAN FINE CERAMICS CENTER   (Japan)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^e Department of Metallurgical and Materials Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; FIRST-PRINCIPLES; INVERSION BOUNDARIES; METALLIC CONDUCTIVITY; OCTAHEDRAL LAYERS; POLYTYPOIDS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SN-DOPED; WURTZITES; ZNO;

CALCULATIONS; CESIUM; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NANOWIRES; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE; ZINC SULFIDE;

TIN;

EID: 84857708791     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp211135r     Document Type: Article

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