Theoretical models of modulation transfer function, quantum efficiency, and crosstalk for CCD and CMOS image sensors

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 729-737

  Djité, Ibrahima ^a   Estribeau, Magali ^a   Magnan, Pierre ^a   Rolland, Guy ^b   Petit, Sophie ^b   Saint Pé, Olivier ^c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b CNES   (France)

^c AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

Charge coupled device (CCD) sensors; CMOS sensors; crosstalk; modulation transfer function (MTF); quantum efficiency (QE)

Indexed keywords

ANALYTICAL MODEL; BURIED CHANNELS; CCD SENSORS; CHARGE DIFFUSION; CMOS IMAGE SENSOR; CMOS SENSORS; DETECTOR PERFORMANCE; DOPED SUBSTRATES; DOPING GRADIENTS; ELECTRICAL CROSSTALKS; MODULATION TRANSFER FUNCTION (MTF); PIXEL SIZE; POINT-SOURCE ILLUMINATION; RESPONSE FUNCTIONS; SPATIAL FREQUENCY; THEORETICAL MODELS;

CMOS INTEGRATED CIRCUITS; CROSSTALK; DIGITAL CAMERAS; ELECTRIC FIELDS; FUNCTION EVALUATION; PIXELS; QUANTUM EFFICIENCY; SENSORS;

OPTICAL TRANSFER FUNCTION;

EID: 84857653404     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2176493     Document Type: Article

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