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Volumn 47, Issue 3, 2012, Pages 826-835

The growth of benzophenone crystals by Sankaranarayanan-Ramasamy (SR) method and slow evaporation solution technique (SEST): A comparative investigation

(4) Senthil Pandian, M a Boopathi, K a Ramasamy, P a Bhagavannarayana, G b

a SSN COLLEGE OF ENGINEERING (India)

b NATIONAL PHYSICAL LABORATORY (India)

Author keywords

A. Organic compounds; B. Crystal growth; D. Defects; D. Dielectric properties; D. Mechanical properties

Indexed keywords

BENZOPHENONE CRYSTALS; CONVENTIONAL METHODS; CRYSTALLINE PERFECTION; DENSITY OF DEFECTS; DIELECTRIC PERMITTIVITIES; GROWN CRYSTALS; HIGH RESOLUTION X RAY DIFFRACTION; LASER DAMAGE THRESHOLD; MICROHARDNESS MEASUREMENT; OPTICAL DAMAGE THRESHOLD; SLOW EVAPORATION; SOLUTION TECHNIQUES; UV-VIS-NIR;

MECHANICAL PROPERTIES; PERMITTIVITY; X RAY DIFFRACTION;

CRYSTAL GROWTH;

EID: 84857500839 PISSN: 00255408 EISSN: None Source Type: Journal
DOI: 10.1016/j.materresbull.2011.11.052 Document Type: Article

Times cited : (80)

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