Unidirectional growth of sulphamic acid single crystal and its quality analysis using etching, microhardness, HRXRD, UV-visible and Thermogravimetric-Differential thermal characterizations

Journal of Crystal Growth

Volumn 312, Issue 3, 2010, Pages 397-401

  Senthil Pandian, M ^a   Charoen In, Urit ^b   Ramasamy, P ^a   Manyum, Prapun ^b   Lenin, M ^c   Balamurugan, N ^a  

^a SSN COLLEGE OF ENGINEERING   (India)

^b SURANAREE UNIVERSITY OF TECHNOLOGY   (Thailand)

^c ANNA UNIVERSITY   (India)

Author keywords

A1. Defects; A1. Etching; A1. High resolution X ray diffraction; A1. Impurities; A2. Growth from solutions; A2. Single crystal growth

Indexed keywords

A1. DEFECTS; A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A2. GROWTH FROM SOLUTIONS; A2. SINGLE CRYSTAL GROWTH; GROWTH FROM SOLUTION; HIGH RESOLUTION X RAY DIFFRACTION;

ACIDS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; DIFFRACTION; ETCHING; EVAPORATION; GRAIN BOUNDARIES; MECHANICAL STABILITY; MICROHARDNESS; QUALITY CONTROL; THERMOANALYSIS; THERMODYNAMIC PROPERTIES; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SINGLE CRYSTALS;

EID: 72549099218     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.10.060     Document Type: Article

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