Effect of Mg doping on the electrical properties of SnO 2 nanoparticles

Current Applied Physics

Volumn 12, Issue 3, 2012, Pages 975-982

  Mazumder, N ^a   Bharati, A ^a   Saha, S ^a   Sen, D ^a   Chattopadhyay, K K ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

Electrical properties; Mg doping; SnO 2; XPS; XRD

Indexed keywords

AC CONDUCTIVITY; CONDUCTIVITY VARIATION; DEFECT CHEMISTRY; DOPED SAMPLE; DOPING CONCENTRATION; ELECTRICAL PARAMETER; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; FIRST PRINCIPLE CALCULATIONS; FOURIER TRANSFORMED INFRARED SPECTROSCOPY; FREQUENCY RANGES; HIGH DENSITY ENERGY; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; HIGHLY SENSITIVE; LOW LOSS; MG DOPING; MG-DOPED; PHASE INFORMATION; POLARIZABILITIES; RELAXATION SPECTRUM; ROOM TEMPERATURE; SINGLE PHASE; SNO 2; TANGENT LOSS; TETRAGONAL STRUCTURE; ULTRA-HIGH DIELECTRIC CONSTANT; XRD;

GRAIN BOUNDARIES; INFRARED SPECTROSCOPY; SOL-GELS; TIN; TIN OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC PROPERTIES;

EID: 84857457946     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.12.022     Document Type: Article

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