SCOPUS 정보 검색 플랫폼

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 444-446

Two-dimensional flex sensor exploiting stacked ultrathin chips

(5) Endler, Stefan a Ferwana, Saleh a Rempp, Horst a Harendt, Christine a Burghartz, Joachim N a

a Institut fur Mikroelektronik Stuttgart (Germany)

Author keywords

Flexible electronics; piezoresistive devices; stress measurement; ultrathin chips

Indexed keywords

ACTIVE DEVICES; DIFFERENTIAL SIGNAL; FLEX SENSOR; MAXIMUM STRESS; PIEZORESISTIVE DEVICES; PIEZORESISTIVE EFFECTS; STRUCTURAL ARRANGEMENT; ULTRATHIN CHIPS; VERTICAL STRESS;

ELECTRON DEVICES; ELECTRONICS ENGINEERING; FLEXIBLE ELECTRONICS; STRESS MEASUREMENT;

SENSORS;

EID: 84857454294 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/LED.2011.2178389 Document Type: Article

Times cited : (14)

References (6)

1
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- Burghartz, J.N.¹ Appel, W.² Harendt, C.³ Rempp, H.⁴ Zimmermann, M.⁵

2
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3
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- CMOS stress sensors on (100) silicon
- DOI 10.1109/4.818923
- R. C. Jaeger, J. C. Suhling, R. Ramani, A. T. Bradley, and J. Xu, "CMOS stress sensors on (100) silicon," IEEE J. Solid-State Circuits, vol. 35, no. 1, pp. 85-95, Jan. 2000. (Pubitemid 30553002)
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- Jaeger, R.C.¹ Suhling, J.C.² Ramani, R.³ Bradley, A.T.⁴ Xu, J.⁵

4
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- Compensation of externally applied mechanical stress by stacking of ultra-thin chips
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- S. Endler, H. Rempp, C. Harendt, and J. N. Burghartz, "Compensation of externally applied mechanical stress by stacking of ultra-thin chips," in Proc. 41st Eur. Solid-State Device Res. Conf., Helsinki, Finland, 2011, pp. 279-282.
- (2011) Proc. 41st Eur. Solid-State Device Res. Conf. , pp. 279-282
- Endler, S.¹ Rempp, H.² Harendt, C.³ Burghartz, J.N.⁴

5
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- Anomalous stress effects in ultra-thin silicon chips on foil
- M.-U. Hassan, H. Rempp, T. Hoang, H. Richter, N. Wacker, and J. N. Burghartz, "Anomalous stress effects in ultra-thin silicon chips on foil," in IEDM Tech. Dig., 2009, pp. 535-538.
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6
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- Characterization of the temperature dependence of the piezoresistive coefficients of silicon from 150 C to +125 C
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- C.-H. Cho, R. C. Jaeger, and J. C. Suhling, "Characterization of the temperature dependence of the piezoresistive coefficients of silicon from 150 C to +125 C," IEEE Sensors J., vol. 8, no. 8, pp. 1455-1468, Aug. 2008.
- (2008) IEEE Sensors J. , vol.8 , Issue.8 , pp. 1455-1468
- Cho, C.-H.¹ Jaeger, R.C.² Suhling, J.C.³

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