Nanodevices in flatland: Two-dimensional graphene-based transistors with high I on/I off ratio

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Fiori, G ^a   Betti, A ^a   Bruzzone, S ^a   D'Amico, P ^a   Iannaccone, G ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; AMBIPOLAR BEHAVIOR; GRAPHENE TRANSISTORS; MULTISCALES; NANO-DEVICES; ROADMAP; SEMICONDUCTOR TECHNOLOGY; TIGHT BINDING;

BORON; ELECTRON DEVICES; NITRIDES; SEMICONDUCTOR DEVICE MANUFACTURE;

GRAPHENE;

EID: 84856983318     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131533     Document Type: Conference Paper

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