Production and characterization of boron-doped single wall carbon nanotubes

Journal of Physical Chemistry C

Volumn 116, Issue 5, 2012, Pages 3281-3285

  Monteiro, F H ^a   Larrude, D G ^a   Maia Da Costa, M E H ^a   Terrazos, L A ^b   Capaz, Rodrigo B ^c   Freire, F L ^a  

^a PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b FEDERAL UNIVERSITY OF CAMPINA GRANDE   (Brazil)

^c FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AB-INITIO ELECTRONIC STRUCTURE CALCULATIONS; BORON ATOM; BORON-DOPED; DOPING LEVELS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HIGH VACUUM; QUALITATIVE CHARACTERIZATION; SIMPLE METHOD; TEMPERATURE RANGE;

BORON; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; FIELD EMISSION MICROSCOPES; TRANSMISSION ELECTRON MICROSCOPY; TUBES (COMPONENTS); X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON NANOTUBES;

EID: 84856925482     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp209494z     Document Type: Article

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