Investigation of CuInS 2 thin film formation by a low-temperature chemical deposition method

ACS Applied Materials and Interfaces

Volumn 4, Issue 1, 2012, Pages 382-390

  Fischereder, Achim ^a,b   Rath, Thomas ^a,b   Haas, Wernfried ^b   Amenitsch, Heinz ^c   Schenk, Dorith ^a   Zankel, Armin ^b   Saf, Robert ^a   Hofer, Ferdinand ^b   Trimmel, Gregor ^a,b  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^c ERICH SCHMID INSTITUTE OF MATERIALS SCIENCE   (Austria)

Author keywords

chemical deposition method; copper indium disulfide; GISAXS; GIWAXS

Indexed keywords

ANNEALING TEMPERATURES; CHALCOPYRITE CRYSTALS; CHEMICAL DEPOSITION METHOD; COATING PROCESS; COORDINATING SOLVENTS; COPPER INDIUM DISULFIDE; GISAXS; GIWAXS; LOW TEMPERATURES; METAL SALT; MORPHOLOGICAL CHANGES; PHOTOVOLTAIC APPLICATIONS; PRECURSOR SOLUTIONS; PRECURSOR SYSTEMS; SCANNING ELECTRONS; SMALL- AND WIDE-ANGLE X-RAY SCATTERINGS; THERMOGRAVIMETRY/MASS SPECTROSCOPY; THIN FILM FORMATION; TIME-RESOLVED;

COPPER; COPPER COMPOUNDS; CRYSTAL STRUCTURE; INDIUM; THIN FILMS; THIOUREAS; VAPOR DEPOSITION;

DEPOSITION;

EID: 84856289592     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am2014579     Document Type: Article

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