Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays

Optics Express

Volumn 20, Issue 2, 2012, Pages 1013-1021

  Yin, Zhengmao ^a   Liu, Xiaoyan ^a,b   Wu, Yongzhong ^a   Hao, Xiaopeng ^a   Xu, Xiangang ^a,b  

^a SHANDONG UNIVERSITY   (China)

^b ShanDong Inspur HuaGuang Optoelectronics CO LTD   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM COMPOUNDS; LIGHT EMISSION; NANORODS; TIN; TIN OXIDES; ZINC OXIDE;

BLUE LIGHT-EMITTING; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDE LAYERS; LIGHT EXTRACTION; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; NANO-CONES; NANOCONE ARRAYS; ROUGH SURFACES; ZNO; ZNO NANOROD;

LIGHT EMITTING DIODES;

GALLIUM; GALLIUM NITRIDE; NANOPARTICLE; NANOTUBE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ILLUMINATION; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; OPTICAL INSTRUMENTATION; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; THEORETICAL MODEL;

GALLIUM; LIGHTING; MICROSCOPY, ELECTRON, SCANNING; MODELS, THEORETICAL; NANOPARTICLES; NANOTECHNOLOGY; NANOTUBES; OPTICAL DEVICES; SURFACE PROPERTIES; ZINC OXIDE;

EID: 84855917562     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.001013     Document Type: Article

References (32)

1. N. Holonyak, "Is the light emitting diode (LED) an ultimate lamp?" Am. J. Phys. 68(9), 864-866 (2000).
2. E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science 308(5726), 1274-1278 (2005).
3. E. Fred, Schubert, Light-Emitting Diodes (Cambridge University Press, 2003).
4. M.-K. Kwon, J.-Y. Kim, I.-K. Park, K. S. Kim, G.-Y. Jung, S.-J. Park, J. W. Kim, and Y. C. Kim, "Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic crystal," Appl. Phys. Lett. 92(25), 251110 (2008).
5. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, "30% external quantum efficiency from surface textured thin-film light-emitting diodes," Appl. Phys. Lett. 63(16), 2174 (1993).
6. J. J. Wierer, A. David, and M. M. Megens, "III-nitride photonic-crystal light-emitting diodes with high extraction efficiency," Nat. Photonics 3(3), 163-169 (2009).
7. R. H. Horng, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, and D. S. Wuu, "GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography," Appl. Phys. Lett. 86(22), 221101 (2005).
8. S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, and J. K. Sheu, "Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography," Appl. Phys. Lett. 91(1), 013504 (2007).
9. C. H. Kuo, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, and G. C. Chi, "Improvement of nearultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers," Appl. Phys. Lett. 89(20), 201104 (2006).
10. Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. Denbaars, S. Nakamura, and E. L. Hu, "Roughening hexagonal surface morphology on laser lift-off (LLO) n-face GaN with simple photo-enhanced chemical wet etching," Jpn. J. Appl. Phys. 43(No. 5A), L637-L639 (2004).
11. J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'Shea, M. J. Ludowise, G. Christenson, Y. C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman, "High-power AlGaInN flip-chip light-emitting diodes," Appl. Phys. Lett. 78(22), 3379 (2001).
12. J. K. Sheu, I. H. Hung, W. C. Lai, S. C. Shei, and M. L. Lee, "Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads," Appl. Phys. Lett. 93(10), 103507 (2008).
13. J. K. Kim, T. Gessmann, E. F. Schubert, J. Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, "GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer," Appl. Phys. Lett. 88(1), 013501 (2006).
14. S. J. An, J. H. Chae, G. C. Yi, and G. H. Park, "Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays," Appl. Phys. Lett. 92(12), 121108 (2008).
15. Y.-C. Chao, C.-Y. Chen, C.-A. Lin, Y.-A. Dai, and J.-H. He, "Antireflection effect of ZnO nanorod arrays," J. Mater. Chem. 20(37), 8134-8138 (2010).
16. S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, "Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays," Appl. Phys. Lett. 92(12), 121108 (2008).
17. J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, "Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency," Appl. Phys. Lett. 90(20), 203515 (2007).
18. K.-K. Kim, S.- Lee, H. Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, "Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution," Appl. Phys. Lett. 94(7), 071118 (2009).
19. M.-K. Lee, C.-L. Ho, and P.-C. Chen, "Light extraction efficiency enhancement of GaN blue LED by liquidphase- deposited ZnO rods," IEEE Photon. Technol. Lett. 20(4), 252-254 (2008).
20. S. Dalui, C.-C. Lin, H.-Y. Lee, C.-H. Chao, and C.-T. Lee, "Light output enhancement of GaN-based lightemitting diodes using ZnO nanorod arrays produced by aqueous solution growth technique," IEEE Photon. Technol. Lett. 22(16), 1220-1222 (2010).
21. J.-W. Kang, M.-S. Oh, Y.-S. Choi, C.-Y. Cho, T.-Y. Park, C. W. Tu, and S.-J. Park, "Improved light extraction of GaN-based green light-emitting diodes with an antireflection layer of ZnO nanorod arrays," Electrochem. Solid-State Lett. 14(3), H120-H123 (2011).
22. P. Uthirakumar, B. D. Ryu, J. H. Kang, H. G. Kim, J. H. Ryu, and C.-H. Hong, "Impact of layer thickness and light transmission of ZnO nanomaterials on GaN-based light emitting diodes," Vacuum 85(2), 198-202 (2010).
23. C. H. Chao, W. H. Lin, C. H. Chen, C. H. Changjean, and C. F. Lin, "Tunable light extraction efficiency of GaN light emitting diodes by ZnO nanorod arrays," Semicond. Sci. Technol. 24(10), 105017 (2009).
24. C. B. Soh, C. B. Tay, S. J. Chua, H. Q. Le, N. S. S. Ang, and J. H. Teng, "Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs," J. Cryst. Growth 312(11), 1848-1854 (2010).
25. C. H. Chiu, C. E. Lee, C. L. Chao, B. S. Cheng, H. W. Huang, H. C. Kuo, T. C. Lu, S. C. Wang, W. L. Kuo, C. S. Hsiao, and S. Y. Chen, "Enhancement of light output intensity by integrating ZnO nanorod arrays on GaNbased LLO vertical LEDs," Electrochem. Solid-State Lett. 11(4), H84-H87 (2008).
26. H. Park, K.-J. Byeon, K.-Y. Yang, J.-Y. Cho, and H. Lee, "The fabrication of a patterned ZnO nanorod array for high brightness LEDs," Nanotechnology 21(35), 355304 (2010).
27. M.-S. Lin, C.-C. Chen, W.-C. Wang, C.-F. Lin, and S.-Y. Chang, "Fabrication of the selective-growth ZnO nanorods with a hole-array pattern on a p-type GaN:Mg layer through a chemical bath deposition process," Thin Solid Films 518(24), 7398-7402 (2010).
28. K. S. Kim, S.-M. Kim, H. Jeong, M. S. Jeong, and G. Y. Jung, "Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodes," Adv. Funct. Mater. 20(7), 1076-1082 (2010).
29. H. Masui, S. Nakamura, and S. P. DenBaars, "Analytical light-ray tracing in two-dimensional objects for lightextraction problems in light-emitting diodes," Appl. Opt. 47(1), 88-92 (2008).
30. K. Govender, D. S. Boyle, P. B. Kenway, and P. O'Brien, "Understanding the factors that govern the deposition and morphology of thin films of ZnO from aqueous solution," J. Mater. Chem. 14(16), 2575-2591 (2004).
31. K.-K. Kim, S.-H. Lee, Kim, J.-C. Park, S.-N. Lee, Y. Park, S.-J. Park, and S.-W. Kim, "Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution," Appl. Phys. Lett. 94(7), 071118 (2009).
32. B. S. Kang, S. J. Pearton, and F. Ren, "Low temperature (<100°C) patterned growth of ZnO nanorod arrays on Si," Appl. Phys. Lett. 90(8), 083104 (2007).