SCOPUS 정보 검색 플랫폼

Synthetic Metals

Volumn 161, Issue 23-24, 2012, Pages 2566-2569

The effect of the active layer thickness on the performance of pentacene-based phototransistors

(3) El Amrani, A a Lucas, B b Ratier, B b

a MOULAY ISMAIL UNIVERSITY (Morocco)

b UNIVERSITY OF LIMOGES (France)

Author keywords

Pentacene; Photosensitivity; Phototransistor; Responsivity; UV illumination

Indexed keywords

ACTIVE LAYER; DIELECTRIC GATES; ELECTRICAL GATES; INDIUM TIN OXIDE; INITIAL VALUES; ORGANIC THIN FILM TRANSISTORS; PENTACENE FILM; PENTACENES; PHOTOELECTRIC PROPERTY; POSITIVE VOLTAGE; RESPONSIVITY; UV ILLUMINATIONS;

INDIUM COMPOUNDS; LIGHT SENSITIVE MATERIALS; PHOTOSENSITIVITY; THIN FILM TRANSISTORS; TIN; TIN OXIDES;

PHOTOTRANSISTORS;

EID: 84855900496 PISSN: 03796779 EISSN: None Source Type: Journal
DOI: 10.1016/j.synthmet.2011.08.011 Document Type: Conference Paper

Times cited : (18)

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