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Volumn 30, Issue 1, 2012, Pages
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Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
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Author keywords
[No Author keywords available]
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Indexed keywords
AL DOPED;
AL-DOPING;
ATOMIC LAYER;
BATCH SYSTEMS;
CRITICAL ISSUES;
DEPOSITION PROCESS;
ELECTRICAL CHARACTERIZATION;
ELECTRICAL STABILITY;
ELECTRODE MATERIAL;
HIGH-K DIELECTRIC;
K-VALUES;
OXYGEN RADICAL;
PLASMA ENHANCED DEPOSITION;
PLASMA ENHANCED PROCESSING;
POST DEPOSITION ANNEALS;
PRODUCTION BATCHES;
SEMICONDUCTOR MANUFACTURING;
TI PRECURSOR;
TIO;
ALUMINUM;
ATOMIC LAYER DEPOSITION;
BATCH DATA PROCESSING;
CURRENT DENSITY;
DEPOSITION;
DIELECTRIC MATERIALS;
ELECTRODES;
LEAKAGE CURRENTS;
PLASMAS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DOPING;
TANTALUM COMPOUNDS;
TITANIUM;
TITANIUM DIOXIDE;
TITANIUM NITRIDE;
PLASMA DEPOSITION;
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EID: 84855572043
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.3670876 Document Type: Article |
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Times cited : (13)
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References (10)
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