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Physical Review Letters

Volumn 108, Issue 1, 2012, Pages

Spin relaxation near the metal-insulator transition: Dominance of the Dresselhaus spin-orbit coupling

(4) Intronati, Guido A a,b,c Tamborenea, Pablo I a,b Weinmann, Dietmar b Jalabert, Rodolfo A b

a UNIVERSIDAD DE BUENOS AIRES (Argentina)

b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG (France)

c SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL VALUES; FINITE SIZE SCALING; HOPPING TERMS; IMPURITY BANDS; N-DOPED; SPIN RELAXATION; SPIN-ORBIT COUPLINGS; TIGHT BINDING MODEL; ZINCBLENDE SEMICONDUCTORS;

BINDING SITES; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

EID: 84855481040 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.108.016601 Document Type: Article

Times cited : (28)

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