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Volumn 81, Issue 7, 2010, Pages

Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

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EID: 77954836042     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.075216     Document Type: Article
Times cited : (69)

References (27)
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    • The discrepancy might result from the higher impurity concentration and a resulting faster momentum scattering time in our Chochralskii-grown GaAs.
    • The discrepancy might result from the higher impurity concentration and a resulting faster momentum scattering time in our Chochralskii-grown GaAs.
  • 10
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    • Sample Avl has been measured in a helium free cryostat, where 8 K was the minimum temperature.
    • Sample A vl has been measured in a helium free cryostat, where 8 K was the minimum temperature.
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    • There is a misprint in Eq. (11) of Ref.. Due to the number of atoms in the primitive unit cell (see Ref.) the factor of 16 has to be replaced by 4 and in Eq. (2) of Ref. it should read 2n instead of n2.
    • There is a misprint in Eq. (11) of Ref.. Due to the number of atoms in the primitive unit cell (see Ref.) the factor of 16 has to be replaced by 4 and in Eq. (2) of Ref. it should read 2 n instead of n 2.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.