Anisotropic exchange interaction of localized conduction-band electrons in semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 7, 2001, Pages

  Kavokin, K V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ARTICLE; CHEMICAL STRUCTURE; ELECTRON; MOLECULAR DYNAMICS; MOLECULAR INTERACTION; NANOPARTICLE; SEMICONDUCTOR;

EID: 0346800964     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.075305     Document Type: Article

References (41)

1. G.A. Prinz, Science 282, 1660 (1998).
2. A. Steane, Rep. Prog. Phys. 61, 117 (1998).
3. G. Burkard, D. Loss, and D.P. DiVincenzo, Phys. Rev. B 59, 2070 (1999).
4. B.E. Kane, Nature (London) 393, 133 (1998).
5. I.V. Ponomarev, V.V. Flambaum, and A.L. Efros, Phys. Rev. B 60, 5485 (1999);
6. Phys. Rev. BI.V. PonomarevV.V. FlambaumA.L. Efros60, 15 848 (1999), and references therein.
7. A. Abragam and B. Bliney, Electron Paramagnetic Resonance of Transition Ions (Clarendon, Oxford, 1970).
8. I. Dzyaloshinskii, Phys. Chem. Solids 4, 241 (1958).
9. T. Moriya, Phys. Rev. 120, 91 (1960).
10. B.E. Larson and H. Ehrenreich, Phys. Rev. B 39, 1747 (1989).
11. G. Dresselhaus, Phys. Rev. 100, 580 (1955).
12. M.I. Dyakonov and V.I. Perel, Fiz. Tverd. Tela 13, 3581 (1971) [Sov. Phys. Solid State 13, 3023 (1972)].
13. M.I. Dyakonov and V.Yu. Kachorovskii, Fiz. Techn. Poluprov. 20, 178 (1986) [Sov. Phys. Semicond. 20, 110 (1986)].
14. Optical Orientation, edited by F. Meier and B.P. Zakharchenya, Modern Problems in Condensed Matter Sciences (North-Holland, Amsterdam, 1984), Vol. 8.
15. E.I. Rashba, Fiz. Tv. Tela (Leningrad) 2, 1224 (1960) [Sov. Phys. Solid State 2, 1109 (1960)].
16. H. Riechert, S.F. Alvarado, A.N. Titkov, and V.I. Safarov, Phys. Rev. Lett. 52, 2297 (1984).
17. V.K. Kalevich and V.L. Korenev, Pis’ma Zh. Exp. Teor. Fiz. 52, 859 (1990) [JETP Lett. 52, 230 (1990)].
18. J.M. Kikkawa and D.D. Awschalom, Nature (London) 397, 139 (1999).
19. W. Knap et al., Phys. Rev. B 53, 3912 (1996).
20. Handbook of Mathematical Functions, edited by M. Abramowitz and I. Stegun (Dover, New York, 1965).
21. Experimental data on Rashba terms for electrons in Si are scarce. For this estimation, the data of Bychkov and Rashba, Sov. Phys. Usp. 28, 632 (1985) [Yu.A. Bychkov and E.I. Rashba, Usp. Fiz. Nauk 146, 531 (1985)] have been used. They report for Si-MOS structures the constant c near (Formula presented).
22. C. Herring and M. Flicker, Phys. Rev. 134, A362 (1964).
23. J.C. Slater, Electronic Structure of Molecules (McGraw-Hill, New York, 1963).
24. R.M. White, Quantum Theory of Magnetism (Springer-Verlag, Berlin, 1983).
25. M.G. Cottam and D.J. Lockwood, Light Scattering in Magnetic Solids (Wiley, New York, 1986).
26. J. Stuhler, G. Schaack, M. Dahl, A. Waag, G. Landwehr, K.V. Kavokin, and I.A. Merkulov, J. Raman Spectrosc. 27, 281 (1996).
27. R.I. Dzhioev et al., Pisma Zh. Exp. Teor. Fiz. 65, 766 (1997) [JETP Lett. 65, 804 (1997)].
28. M. Bayer et al., Phys. Rev. Lett. 82, 1748 (1999).
29. E.L. Ivchenko and G.E. Pikus, Superlattices and Other Heterostructures (Springer-Verlag, Berlin, 1995).
30. S.T. Crooker, D.D. Awschalom, J.J. Baumberg, F. Flack, and N. Samarth, Phys. Rev. B 56, 7574 (1997).
31. B.I. Shklovskii and A.L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
32. A.V. Khaetskii and Yu.V. Nazarov, Phys. Rev. B 61, 12 639 (2000).
33. M.I. Dyakonov and V.I. Perel, Zh. Éksp. Teor. Fiz. 65, 362 (1973) [Sov. Phys. JETP 36, 995 (1973)].
34. R.I. Dzhioev, B.P. Zakharchenya, V.L. Korenev, and M.N. Stepanova, Fiz. Tverd. Tela 39, 1975 (1997) [Phys. Solid State 39, 1765 (1997)].
35. J.M. Kikkawa and D.D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998).
36. R.I. Dzhioev, I.A. Merkulov, M.N. Tkachuk, and V.G. Fleisher, Zh. Éksp. Teor. Fiz. 83, 2252 (1982) [Sov. Phys. JETP 56, 1304 (1982)].
37. A. Barenco, C.N. Bennett, R. Cleve, D.P. DiVincenzo, N. Margolus, P. Shor, T. Sleator, J.A. Smolin, and H. Weinfurter, Phys. Rev. A 52, 3457 (1995).
38. J. Preskill, Proc. R. Soc. London, Ser. A 454, 385 (1998);
39. J. Preskillquant-ph/9705031 (unpublished).
40. N.S. Averkiev and L.E. Golub, Phys. Rev. B 60, 15 582 (1999).
41. Applying inhomogeneous electric fields with nanometer-sized gates is usually suggested in order to control the overlap of electron wave functions in quantum-computer cells.