Low-field microwave absorption in pulse laser deposited FeSi thin film

Journal of Magnetism and Magnetic Materials

Volumn 324, Issue 6, 2012, Pages 1172-1176

  Gavi, H ^a   Ngom, B D ^b,c   Beye, A C ^b   Strydom, A M ^d   Srinivasu, V V ^e   Chaker, M ^c   Manyala, N ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b Université Cheikh Anta de Dakar   (Senegal)

^c INRS EMT   (Canada)

^d UNIVERSITY OF JOHANNESBURG   (South Africa)

^e UNIVERSITY OF SOUTH AFRICA   (South Africa)

Author keywords

Crystalline B20 FeSi film; Low field microwave absorption; Pulsed laser ablation

Indexed keywords

CUBIC STRUCTURE; DC FIELD; DOMAIN STRUCTURE; FERROMAGNETIC STATE; FILM SURFACES; LOW FIELD; LOW FIELD MICROWAVE ABSORPTIONS; LOW MAGNETIC FIELDS; LOW-FIELD MICROWAVE ABSORPTION; MICROWAVE POWER; POLYCRYSTALLINE; PULSE LASER; RF FREQUENCIES; ROOM TEMPERATURE; SI(111) SUBSTRATE; SIGNAL STRENGTHS;

AMORPHOUS MATERIALS; DC POWER TRANSMISSION; MAGNETIC FIELDS; MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION; PULSED LASERS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

MICROWAVE SENSORS;

EID: 84855444643     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2011.11.003     Document Type: Article

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