Undoped and doped FeSi or how to make a heavy fermion metal with three of the most common elements

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 63, Issue 1, 1999, Pages 119-124

  Aeppli, G ^a   DiTusa, J F ^b  

^a NEC LABORATORIES AMERICA   (United States)

^b LOUISIANA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH TEMPERATURE SUPERCONDUCTORS; IRON COMPOUNDS; MAGNETIC SUSCEPTIBILITY;

HEAVY FERMION METALS; KONDO INSULATORS;

OXIDE SUPERCONDUCTORS;

EID: 0032628132     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00061-6     Document Type: Article

References (19)

1. L.F. Mattheiss, D.R. Hammann, Phys. Rev. B 47 (1993) 13114.
2. G. Foex, J. Phys. Radium 9 (1938) 37.
3. V. Jaccarino, et al., Phys. Rev. 160 (1967) 476.
4. G. Shirane, et al., Phys. Rev. Lett. 59 (1987) 351.
5. G. Aeppli, Z. Fisk, Comments Condensed Matter Phys. 16 (1992) 155.
6. G. Aeppli, J.F. DiTusa, Z. Fisk, in: K.S. Bedell, Z. Wang, D. Meltzer, A.V. Balatsky, E. Abrahams (Ed.), Proceedings of the Workshop on Strongly Conrelated Electronic Materials, Addison Wesley, Reading, MA, 1994.
7. Z. Schlesinger, et al., Phys. Rev. Lett. 71 (1993) 1748.
8. C. Fu, M.P.C.M. Krijn, S. Doniach, Phys. Rev. B 49 (1994) 2219.
9. D. van der Marel, et al., Physica B 244 (1998) 138.
10. C.-H. Park, et al., Phys. Rev. B 52 (1995) R16981.
11. T. Saitoh, et al., Solid State Comm. 95 (1995) 397.
12. J. Beille, J. Voiron, J. Roth, Sol. State Comm. 47 (1983) 399.
13. J.F. DiTusa, et al., Phys. Rev. Lett. 78 (1997) 2831.
14. J.F. DiTusa, et al., Phys. Rev. B 58 (1998) 10288.
15. T.F. Rosenbaum, et al., Phys. Rev. Lett. 45 (1980) 1723.
16. S.B. Field, T.F. Rosenbaum, Phys. Rev. Lett. 55 (1985) 522.
17. Y. Ootuka, et al., Solid State Comm. 36 (1980) 827.
18. C. Yamanouchi, et al., J. Phys. Soc. Jpn. 22 (1967) 859.
19. P.W. Chapman, et al., J. Appl. Phys. 34 (1963) 3291.