Electrical properties of tin-doped indium oxide thin films prepared by a dip coating

Ceramics International

Volumn 38, Issue SUPPL. 1, 2012, Pages

  Seki, Y ^a   Sawada, Y ^a   Wang, M H ^a   Lei, H ^a   Hoshi, Y ^a   Uchida, T ^a  

^a TOKYO POLYTECHNIC UNIVERSITY   (Japan)

Author keywords

A. Films; B. Grain size; C. Electrical properties; In 2O 3

Indexed keywords

AVERAGE SIZE; AVERAGE VALUES; B. GRAIN SIZE; DIP COATING; DIP-COATING PROCESS; INDIUM TIN OXIDE; LOW RESISTIVITY; POST DEPOSITION ANNEALING; SILICON SUBSTRATES; TIN DOPED INDIUM OXIDE; TRANSPARENT CONDUCTING FILMS;

COATINGS; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FILM PREPARATION; INDIUM; OXIDE FILMS; SAPPHIRE; SUBSTRATES; TIN;

GRAIN GROWTH;

EID: 84655169759     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2011.05.109     Document Type: Conference Paper

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