Optical lattices of InGaN quantum well excitons

Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

  Chaldyshev, V V ^a   Bolshakov, A S ^a   Zavarin, E E ^a   Sakharov, A V ^a   Lundin, W V ^a   Tsatsulnikov, A F ^a   Yagovkina, M A ^a   Kim, Taek ^b   Park, Youngsoo ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BRAGG REFLECTION; BRAGG RESONANCE; ENHANCEMENT FACTOR; EXCITON-POLARITON; INGAN QUANTUM WELLS; OPTICAL LATTICES; OSCILLATOR STRENGTHS; RESONANT ENHANCEMENTS; ROOM TEMPERATURE;

BINDING ENERGY; EXCITONS; GALLIUM NITRIDE; LASER OPTICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84555202863     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3670499     Document Type: Article

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