Amplifier gain per stage up to 0.5 THz using 35 nm InP HEMT transistors

International Journal of High Speed Electronics and Systems

Volumn 20, Issue 3, 2011, Pages 399-404

  Sarkozy, S ^a   Mei, X ^a   Yoshida, W ^a   Liu, P H ^a   Lange, M ^a   Lee, J ^a   Zhou, Z ^a   Deal, W R ^a   Radisic, V ^a   Leong, K ^a   Lai, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Gain per Stage; HEMT; InP; MAG; THz

Indexed keywords

AMPLIFIER GAIN; DEVICE LAYOUT; DISTRIBUTED EFFECTS; GATE FINGERS; HIGH GAIN; HIGHER FREQUENCIES; INP; INP HEMT; MAG; PASSIVE ELEMENTS; STAGE-UP; THZ; TRANSISTOR GAIN; WAFER THICKNESS;

TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84555195054     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156411006684     Document Type: Article

References (5)

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