Defect production in ion-implanted yttria-stabilized zirconia investigated by positron depth profiling

Journal of Alloys and Compounds

Volumn 382, Issue 1-2, 2004, Pages 252-256

  Saude S ^a,b,c   Grynszpan, R I ^a,b   Anwand, W ^d   Brauer, G ^d  

^a DGA/DCE/CTA   (France)

^b UPR 209   (France)

^c DYNFLUID LABORATORY   (France)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Insulators; Ion implantation; Point defects; Position spectroscopies; Positrons; Radiation effects; Zirconia

Indexed keywords

CRYSTAL DEFECTS; DATA ACQUISITION; DOPPLER EFFECT; ELECTRIC INSULATORS; ION IMPLANTATION; MONTE CARLO METHODS; POSITRON ANNIHILATION SPECTROSCOPY; RADIATION EFFECTS; SINGLE CRYSTALS;

FREE-VOLUME DEFECTS; POSITRON SPECTROSCOPIES; ROOM TEMPERATURE (RT); SLOW POSITRON IMPLANTATION SPECTROSCOPY (SPIS);

ZIRCONIA;

EID: 8444228273     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.02.062     Document Type: Conference Paper

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