Improvement of performance of inas quantum dot solar cell by inserting thin alas layers

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Hu, Dongzhi ^a   Mcpheeters, Claiborne Co ^b   Yu, Edward T ^b   Schaadt, Daniel M ^a  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; ANNEALING; ATOMIC FORCE MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MONOLAYERS; NANOCRYSTALS; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; CONVERSION EFFICIENCY;

ANNEALED SAMPLES; CAPPING LAYER; DEVICE SURFACES; FILL FACTOR; IN-SITU ANNEALING; INAS QUANTUM DOTS; POWER CONVERSION EFFICIENCIES; SPECTRAL RESPONSE; CAP LAYERS; IN-SITU; INAS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84255204960     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-83     Document Type: Article

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