Trapping of metal atoms in the defects on graphene

Journal of Chemical Physics

Volumn 135, Issue 22, 2011, Pages

  Tang, Yanan ^a   Yang, Zongxian ^a,b   Dai, Xianqi ^a,b  

^a HENAN NORMAL UNIVERSITY   (China)

^b Henan Key Laboratory of Photovoltaic Materials   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; BRIDGE SITES; CARBON ATOMS; DEFECT SITES; FIRST-PRINCIPLES; LATTICE VACANCY; METAL ATOMS; PT ATOMS; SINGLE METAL ATOMS; TRAPPING ABILITY; VACANCY SITES;

ATOMS; CATALYST SELECTIVITY; DEFECTS; DENSITY FUNCTIONAL THEORY; DIFFUSION BARRIERS; ELECTRONIC STRUCTURE; MAGNETIC PROPERTIES; METALS; PALLADIUM; PLATINUM; TIN;

GRAPHENE;

EID: 83755186495     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3666849     Document Type: Article

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