Effects of loading rate and temperature on domain switching and evolutions of reference remnant state variables during polarization reversal in a PZT wafer

Ceramics International

Volumn 38, Issue 2, 2012, Pages 1115-1126

  Lee, Najae ^a   Kim, Sang Joo ^a  

^a University of Seoul   (South Korea)

Author keywords

D. PZT; Loading rate; Polarization reversal; Remnant; Switching; Temperature

Indexed keywords

COERCIVE FIELD; DOMAIN SWITCHINGS; DOMAIN-SWITCHING PROCESS; EFFECTS OF ELECTRIC FIELDS; ELECTRIC DISPLACEMENT; EXTENSIONAL STRAIN; HIGH TEMPERATURE; IN-PLANE; LOADING RATE; MEASURED DATA; POLARIZATION REVERSAL; POLARIZATION REVERSALS; PZT; PZT WAFER; REMNANT; REMNANT POLARIZATIONS; STATE VARIABLES; THICKNESS DIRECTION;

ELECTRIC FIELDS; POLARIZATION; SWITCHING; TEMPERATURE;

LOADING;

EID: 83555165874     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2011.08.039     Document Type: Article

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