Domain switching and creep behavior of a poled PZT wafer under through-thickness electric fields at high temperatures

Acta Materialia

Volumn 58, Issue 6, 2010, Pages 2237-2249

  Kim, Sang Joo ^a   Kim, Ju Hong ^a   Lee, Chang Hoan ^b  

^a University of Seoul   (South Korea)

^b Korea Institute of Science and Technology Information (KISTI)   (South Korea)

Author keywords

Creep; Domain switching; Electric field; High temperature; PZT wafer

Indexed keywords

CONSTANT MAGNITUDE; CREEP BEHAVIORS; CREEP RESPONSE; DOMAIN SWITCHING; DOMAIN SWITCHINGS; DOMAIN-SWITCHING PROCESS; ELECTRIC DISPLACEMENT; HIGH TEMPERATURE; IN-PLANE STRAINS; LOADING TIME; PZT WAFER; THICKNESS DIRECTION;

CREEP; ELECTRIC FIELDS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; SEMICONDUCTING LEAD COMPOUNDS; SWITCHING;

ELECTRIC FIELD MEASUREMENT;

EID: 76249086565     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.12.011     Document Type: Article

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