Single-chip 20-GHz VCO and frequency divider in SiGe technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 835-838

  Ettinger, K ^a   Stelzer, A ^a   Diskus, C G ^a   Thomann, W ^b   Fenk, J ^c   Weigel, R ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b DICE GmbH & Co KG   (Austria)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; DIFFERENTIATING CIRCUITS; ELECTRIC POWER SUPPLIES TO APPARATUS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; INTEGRATING CIRCUITS; MICROELECTRONIC PROCESSING; MICROSTRIP DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL NOISE MEASUREMENT; VARACTORS; VARIABLE FREQUENCY OSCILLATORS;

DIFFERENTIAL SIGNAL; MICROSTRIP BALUN; PHASE NOISE MEASUREMENT; SILICON GERMANIUM BIPOLAR TECHNOLOGY; SINGLE CHIP FREQUENCY DIVIDER; SINGLE CHIP VOLTAGE CONTROLLED OSCILLATORS;

FREQUENCY DIVIDING CIRCUITS;

EID: 0036070021     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011760     Document Type: Article

References (5)

1. An integrated 20 GHz SiGe bipolar differential oscillator with high tuning range
2. 22 GHz monolithically integrated oscillator in silicon bipolar technology
3. Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
4. A microwave position sensor with submillimeter accuracy