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Volumn 377, Issue 2-3, 1996, Pages 312-319

Back-illuminated CCDs made by gas immersion laser doping

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC LOSSES; ELECTRON TRANSPORT PROPERTIES; GAS LASERS; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; X RAYS;

EID: 0030212157     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01401-2     Document Type: Article
Times cited : (8)

References (18)
  • 18
    • 0022957473 scopus 로고
    • Measurement of electron lifetime, electron mobility and bandgap narrowing in heavily doped p-type silicon
    • Washington
    • S.E. Swirhun, Y.H. Kwark and R.M. Swanson, Measurement of electron lifetime, electron mobility and bandgap narrowing in heavily doped p-type silicon, Int. Electron Devices Meeting Tech. Dig., Washington 24-27, 1986.
    • (1986) Int. Electron Devices Meeting Tech. Dig. , pp. 24-27
    • Swirhun, S.E.1    Kwark, Y.H.2    Swanson, R.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.