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Volumn 2002-January, Issue , 2002, Pages 187-193
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Heavy ion transient characterization of a hardened-by-design active pixel sensor array
f
SGT INC
(United States)
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Author keywords
CMOS process; Current measurement; Geometry; Photodiodes; Process design; Radiation hardening; Sensor arrays; Sensor phenomena and characterization; Testing; Transient response
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
DESIGN;
ELECTRIC CURRENT MEASUREMENT;
ENERGY TRANSFER;
GEOMETRY;
HARDENING;
HEAVY IONS;
PHOTODIODES;
PIXELS;
PROCESS DESIGN;
RADIATION;
RADIATION HARDENING;
SENSOR ARRAYS;
TESTING;
TRANSIENT ANALYSIS;
TRANSIENTS;
ACTIVE PIXEL SENSOR;
ACTIVE PIXEL SENSOR ARRAYS;
CMOS PROCESSS;
ION INCIDENCE ANGLE;
LINEAR ENERGY TRANSFER;
RADIATION TOLERANT;
SINGLE EVENT TRANSIENTS;
TRANSIENT MEASUREMENT;
RADIATION EFFECTS;
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EID: 8344262969
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/REDW.2002.1045552 Document Type: Conference Paper |
Times cited : (18)
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References (5)
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