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Volumn 382, Issue 1-2, 2004, Pages 244-251

Application of positron annihilation techniques for semiconductor studies

Author keywords

Helium; Implantation; Point defects; Positron annihilation; Positron spectroscopies; Precipitation; Semiconductors; Silicon

Indexed keywords

HELIUM; ION IMPLANTATION; MAGNETIC FIELD EFFECTS; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; PRECIPITATION (CHEMICAL); SILICON;

EID: 8344257979     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.05.037     Document Type: Conference Paper
Times cited : (42)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.