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Volumn 382, Issue 1-2, 2004, Pages 244-251
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Application of positron annihilation techniques for semiconductor studies
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Author keywords
Helium; Implantation; Point defects; Positron annihilation; Positron spectroscopies; Precipitation; Semiconductors; Silicon
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Indexed keywords
HELIUM;
ION IMPLANTATION;
MAGNETIC FIELD EFFECTS;
POINT DEFECTS;
POSITRON ANNIHILATION SPECTROSCOPY;
PRECIPITATION (CHEMICAL);
SILICON;
ANGULAR CORRELATION OF ANNIHILATION RADIATION (ACAR);
POSITRON ANNIHILATION;
POSITRON SPECTROSCOPIES;
SOLID STATE SPECTROSCOPY;
SEMICONDUCTOR MATERIALS;
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EID: 8344257979
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2004.05.037 Document Type: Conference Paper |
Times cited : (42)
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References (20)
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