Performance, radiation damage, and future plans of the BABAR silicon vertex tracker

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 I, 2004, Pages 2298-2301

  Re, V ^a,b   Kirkby, D ^c   Bruinsma, M ^c   Berryhill, J ^d   Burke, S ^d   Callahan, D ^d   Campagnari, C ^d   Dahmes, B ^d   Hale, D ^d   Hart, P ^d   Kyre, S ^d   Levy, S ^d   Long, O ^d   Mazur, M ^d   Richman, J ^d   Stoner, J ^d   Verkerke, W ^d   Beringer, J ^e   Beck, T ^e   Eisner, A M ^e   Grothe, M ^e   Lockman, W S ^e   Pulliam, T ^e   Seiden, A ^e   Spradlin, P ^e   Walkowiak, W ^e   Wilson, M ^e   Borean, C ^f,g   Bozzi, C ^f,g   Piemontese, L ^f,g   Breon, A B ^h   Brown, D ^h   Charles, E ^h,i   Clark, A R ^h   Dardin, S ^h   Goozen, F ^h   Kerth, L T ^h   Gritsan, A ^h   Lynch, G ^h   Perazzo, A ^h,j   Roe, N A ^h   Zizka, G ^h   Lillard, V ^k   Roberts, D ^k   Brenna, E ^l,m   Citterio, M ^l,m   Lanni, F ^l,m   Palombo, F ^l,m   Ratti, L ^n,o   Manfredi, P F ^n,o   Mandelli, E ^n,o   Angelini, C ^n,p   Batignani, G ^n,p   Bettarini, S ^n,p   Bondioli, M ^n,p   Bosi, F ^n,p   Bucci, F ^n,p   Calderini, G ^n,p   Carpinelli, M ^n,p   Ceccanti, M ^n,p   Forti, F ^n,p   Gagliardi, D ^n,p   Giorgi, M A ^n,p   Lusiani, A ^n,p   Mammini, P ^n,p   Marchiori, G ^n,p   Morganti, M ^n,p   Morsani, F ^n,p   Neri, N ^n,p   Paoloni, E ^n,p   Profeti, A ^n,p   Rama, M ^n,p   Rizzo, G ^n,p   Sandrelli, F ^n,p   Simi, G ^j,n,p   Walsh, J ^n,p   Elmer, P ^q   Burchat, P ^r   Cheng, C ^r   Edwards, A J ^r   Meyer, T I ^r   Petersen, B A ^r   Roat, C ^r   Bona, ^s,t   Bianchi, F ^s,t   Gamba, D ^s,t   Trapani, P ^s,t   Bosisio, L ^u,v   Ricca, G D ^u,v   Dittongo, S ^u,v   Lanceri, L ^u,v   Rashevskaia, I ^u,v   Vitale, L ^u,v   Vuagnin, G ^u,v   Datta, M ⁱ   Liu, R ⁱ   Mihalyi, A ⁱ   more..

^a INFN SEZIONE DI PAVIA   (Italy)

^b UNIVERSITY OF BERGAMO   (Italy)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f INFN SEZIONE DI FERRARA   (Italy)

^g UNIVERSITY OF FERRARA   (Italy)

^h LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

ⁱ UNIVERSITY OF WISCONSIN MADISON   (United States)

^j SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^k UNIVERSITY OF MARYLAND   (United States)

^l INFN SEZIONE DI MILANO   (Italy)

^m UNIVERSITY OF MILAN   (Italy)

ⁿ INFN SEZIONE DI PISA   (Italy)

^o UNIVERSITY OF PAVIA   (Italy)

^p UNIVERSITY OF PISA   (Italy)

^q PRINCETON UNIVERSITY   (United States)

^r STANFORD UNIVERSITY   (United States)

^s SEZIONE DI TORINO   (Italy)

^t UNIVERSITY OF TURIN   (Italy)

^u SEZIONE DI TRIESTE   (Italy)

^v UNIVERSITY OF TRIESTE   (Italy)

more..

Author keywords

BABAR; Radiation damage; Silicon vertex tracker (SVT)

Indexed keywords

CARBON FIBERS; DEGREES OF FREEDOM (MECHANICS); DETECTORS; INTEGRATED CIRCUITS; IRRADIATION; LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; ROTATION; SIGNAL TO NOISE RATIO; SILICON;

BABAR; CHARGE COLLECTION EFFICIENCY (CCE); ELECTRONICS NOISE (ENC); SILICON DETECTORS; SILICON VERTEX TRACKER (SVT);

RADIATION DAMAGE;

EID: 8344237592     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.836092     Document Type: Article

References (7)

1. B. Aubert et al., "The BaBar detector," Nucl. Instrum. Methods, vol. A 479, pp. 1-116, 2002.
2. D. Boutigny et al. "BaBar Technical Design Report," SLAC-R-0457.
3. D. Barbieri et al., "Silicon sensors for the BaBar vertex tracker: Design, electrical tests and production quality control," Nuovo Cim., vol. A 112, pp. 113-130, 1999.
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5. I. Rashevskaya, S. Bettarini, G. Rizzo, L. Bosisio, S. Dittongo, and E. Quai, "Radiation damage of silicon structures with electrons of 900-Mev," Nucl. Instrum. Methods, vol. A 485, pp. 126-132, 2002.
6. L. Beattie, T. J. Brodbeck, A. Chilingarov, G. Hughes, P. Ratoff, and T. Sloan, "Charge collection efficiency in heavily irradiated silicon diodes," Nucl. Instrum. Methods, vol. A 412, pp. 238-246, 1998.
7. V. A. J. van Lint, T. M. Flanagan, R. E. Leadon, J. A. Naber, and V. C. Rogers, Mechanisms of Radiation Effects in Electronic Materials. New York: Wiley, 1980, vol. 1, pp. 316-320.