Characterization of large-scale non-uniformities in a 20k TDC/SPAD array integrated in a 130nm CMOS process

European Solid-State Device Research Conference

Volumn , Issue , 2011, Pages 331-334

  Veerappan, C ^a   Richardson, J ^b   Walker, R ^c   Li, D U ^c   Fishburn, M W ^a   Stoppa, D ^d   Borghetti, F ^d   Maruyama, Y ^a   Gersbach, M ^e   Henderson, R K ^c   Bruschini, C ^e   Charbon, E ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DIALOG SEMICONDUCTOR   (Germany)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

^d FONDAZIONE BRUNO KESSLER   (Italy)

^e EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE PIXEL; CMOS PROCESSS; ILLUMINATION LEVELS; LARGE ARRAYS; NON-UNIFORMITIES; NONUNIFORMITY; OPERATING CONDITION; RESPONSIVITY; SINGLE PHOTON AVALANCHE DIODE; SINGLE PHOTONS; SINGLE-PHOTON COUNTING; STANDARD DEVIATION; TIME RESOLVED IMAGING; TIME TO DIGITAL CONVERTERS; TIME-CORRELATED MEASUREMENTS; TIMING RESOLUTIONS;

CMOS INTEGRATED CIRCUITS; FREQUENCY CONVERTERS; MEDICAL APPLICATIONS; MEDICAL IMAGING; MULTIPHOTON PROCESSES; PARTICLE BEAMS; PHOTONS; PIXELS; TIMING JITTER;

PHOTON CORRELATION SPECTROSCOPY;

EID: 82955225221     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2011.6044167     Document Type: Conference Paper

References (11)

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