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Volumn 326, Issue 1, 2011, Pages
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Strain measurement for the semiconductor industry with nm-scale resolution by dark field electron holography and nanobeam electron diffraction
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON DIFFRACTION;
ELECTRON HOLOGRAPHY;
ELECTRONS;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
HOLOGRAPHY;
NANOWIRES;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON ALLOYS;
SOLS;
STRAIN MEASUREMENT;
TRANSMISSION ELECTRON MICROSCOPY;
DARK-FIELD ELECTRON HOLOGRAPHIES;
ELECTRICAL PERFORMANCE;
EXPERIMENTAL STRAINS;
NANOBEAM ELECTRON DIFFRACTION;
SCALE RESOLUTION;
SEMICONDUCTOR INDUSTRY;
SOURCE AND DRAINS;
SPATIAL RESOLUTION;
SEMICONDUCTOR DEVICES;
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EID: 82955219734
PISSN: 17426588
EISSN: 17426596
Source Type: Conference Proceeding
DOI: 10.1088/1742-6596/326/1/012025 Document Type: Conference Paper |
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Times cited : (5)
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References (5)
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