Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Singh, Bharti ^a   Mehta, B R ^a   Govind, ^b   Feng, X ^c   Müllen, Klaus ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

^c MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; BLOCKING LAYERS; CORE-LEVEL PEAKS; ELECTRONIC INTERACTIONS; HYBRID INTERFACE; INTERFACIAL LAYER; ION STORAGE; RECTIFYING CHARACTERISTICS; RESISTIVE SWITCHING; SHIFT-AND;

COPPER; GRAPHENE; MULTILAYERS; OXYGEN; SWITCHING;

SWITCHING SYSTEMS;

EID: 82955213993     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3663971     Document Type: Article

References (13)

1. C. Joachim, J. K. Gimzewski, and A. Aviram, Nature (London) 408, 541 (2000). 10.1038/35046000
2. C. Wu, F. Li, Y. Zhang, T. Guo, and T. Chen, Appl. Phys. Lett. 99, 042108 (2011). 10.1063/1.3619815
3. B. Wang, X.-L. Wu, C.-Y. Shu, Y.-G. Guo, and C.-R. Wang, J. Mater. Chem. 20, 10661 (2010). 10.1039/c0jm01941k
4. Y. Ye, L. Gan, L. Dai, H. Meng, F. Wei, Y. Dai, Z. Shi, B. Yu, X. Guo, and G. Qin, J. Mater. Chem. 21, 11760 (2011). 10.1039/c1jm11441g
5. B. Singh, B. R. Mehta, M. Singh, G. Gupta, L. Dossel, X. Feng, and K. Mullen, Appl. Phys. Lett. 98, 072101 (2011). 10.1063/1.3544937
6. A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6 (Pubitemid 351680723)
7. W. S. Hummers and R. E. Offeman, J. Am. Chem. Soc. 80, 1339 (1958). 10.1021/ja01539a017
8. H. Lee, J. A. Bain, S. Choi, and P. A. Salvador, Appl. Phys. Lett. 90, 202107 (2007). 10.1063/1.2739081 (Pubitemid 46794000)
9. S. M. Sze, Semiconductor Devices, Physics and Technology (Wiley, New York, 1985).
10. D. A. Svintsitskiy, A. I. Stadnichenko, D. V. Demidov, S. V. Koscheev, and A. I. Boronin, Appl. Surf. Sci. 257, 8542 (2011). 10.1016/j.apsusc.2011.05. 012
11. B. Balamurugan, Appl. Phys. Lett. 82, 115 (2003). 10.1063/1.1533852
12. S. Hong, D. Xiao Long, I. Hwang, J. Kim, Y. Chang Park, S. Kang, and B. Ho Park, Appl. Phys. Lett. 99, 052105 (2011). 10.1063/1.3619833
13. Y. J. Shin, J. H. Kwon, G. Kalon, K. Lam, C. S. Bhatia, G. Liang, and H. Yang, Appl. Phys. Lett. 97, 262105 (2010). 10.1063/1.3532849