Transition from irradiation-induced amorphization to crystallization in nanocrystalline silicon carbide

Journal of the American Ceramic Society

Volumn 94, Issue 12, 2011, Pages 4127-4130

  Jiang, Weilin ^a   Jiao, Liang ^b   Wang, Haiyan ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION PROCESS; AVERAGE GRAIN SIZE; ELEVATED TEMPERATURE; EX SITU; FLUENCES; GRAIN SIZE; HELIUM ION; IN-SITU; ION CHANNELING; ION FLUENCES; IRRADIATED SAMPLES; IRRADIATION CONDITIONS; MONOCRYSTALLINE; NANO GRAINS; NANOCRYSTALLINES; NUCLEAR ENERGY SYSTEMS; SHARP TRANSITION; STRUCTURAL COMPONENT;

AMORPHIZATION; EPITAXIAL GROWTH; GOLD; GRAIN SIZE AND SHAPE; HELIUM; IONS; IRRADIATION; NUCLEAR ENERGY; SILICON CARBIDE; X RAY DIFFRACTION;

NANOCRYSTALLINE SILICON;

EID: 82955212957     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04887.x     Document Type: Article

References (13)

1. 2 Pellets by a Combustion Reaction," J. Nucl. Mater., 281, 163-70 (2000).
2. P. Fenici, A. J. Frias Rebelo, R. H. Jones, A. Kohyama, and, L. L. Snead, " Current Status of SiC/SiC Composites R&D," J. Nucl. Mater., 258-263, 215-25 (1998). (Pubitemid 128415475)
3. R. A. Verrall, M. D. Vlajic, and, V. D. Krstic, " Silicon Carbide as an Inert-Matrix for a Thermal Reactor Fuel," J. Nucl. Mater., 274, 54-60 (1999).
4. P. Wray, " Materials for Nuclear Energy in the Post-Fukushima Era," Am. Ceram. Soc. Bull., 9, 24-8 (2011).
5. + Ions," J. Mater. Res., 25, 2341-8 (2010).
6. W. Jiang, H. Wang, I. Kim, I.-T. Bae, G. Li, P. Nachimuthu, Z. Zhu, Y. Zhang, and, W. J. Weber, " Response of Nanocrystalline 3C Silicon Carbide to Heavy-Ion Irradiation," Phys. Rev. B, 80, 161301(R), 4pp (2009).
7. M. Mayer, SIMNRA User's Guide, Garching, Germany, 1997; available at.
8. J. F. Ziegler, J. P. Biersack, and, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon, New York, 1985; available at.
9. W. Jiang, Y. Zhang, and, W. J. Weber, " Temperature Dependence of Disorder Accumulation and Amorphization in Au-Ion-Irradiated 6H-SiC," Phys. Rev. B, 70, 165208, 8pp (2004).
10. F. Priolo, C. Spinella, A. La Ferla, E. Rimini, and, G. Ferla, " Ion-Assisted Recrystallization of Amorphous Silicon," Appl. Surf. Sci., 43, 178-86 (1989). (Pubitemid 20662885)
11. F. Priolo, and, E. Rimini, " Ion-Beam-Induced Epitaxial Crystallization and Amorphization in Silicon," Mater. Sci. Rep., 5, 319-79 (1990). (Pubitemid 21654568)
12. W. Jiang, Y. Zhang, M. H. Engelhard, W. J. Weber, G. J. Exarhos, J. Lian, and, R. C. Ewing, " Behavior of Si and C Atoms in Ion Amorphized SiC," J. Appl. Phys., 101, 023524, 9pp (2007).
13. V. Heera, J. Stoemenos, R. Kögler, M. Voelskow, and, W. Skorupa, " Crystallization and Surface Erosion of SiC by Ion Irradiation at Elevated Temperatures," J. Appl. Phys., 85, 1378-86 (1999). (Pubitemid 129614927)