Time-of-flight 3-D imaging pixel structures in standard CMOS processes

IEEE Journal of Solid-State Circuits

Volumn 43, Issue 7, 2008, Pages 1594-1602

  Durini, Daniel ^b   Brockherde, Werner ^a,c   Ulfig, Wiebke ^c   Hosticka, Bedrich J ^a,c  

^a IEEE

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c FRAUNHOFER INSTITUTE FOR MICROELECTRONIC CIRCUITS AND SYSTEMS   (Germany)

Author keywords

3 D imaging; Charge coupling; Charge injection photogate; Correlated double sampling CDS; High speed NIR imaging; Pho todiode based pixels; Pixel noise; Range finder; SNR; Standard CMOS processes; Time compression amplification; Time of flight

Indexed keywords

AMPLIFICATION; CHARGE INJECTION; INFRARED DEVICES; NEGATIVE IONS; OPTICAL DESIGN; OPTOELECTRONIC DEVICES; SEMICONDUCTOR JUNCTIONS; STANDARDS;

CHARGE INJECTIONS; CMOS IMAGING; FILL FACTOR (FF); FRAUNHOFER (CO); HIGH SPEEDS; IMAGING APPLICATIONS; NEAR INFRA-RED (NIR); ON TIME; P N JUNCTIONS; PHOTO GATES; SPECTRAL RESPONSIVITY; STANDARD CMOS; THREE DIMENSIONAL (3 D) IMAGING; TIME-OF-FLIGHT (TOF);

PIXELS;

EID: 46749092921     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.922397     Document Type: Conference Paper

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