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Volumn 624, Issue 2, 2010, Pages 470-475

Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

Author keywords

CMOS imaging; High speed imaging; Large pixels; Lateral drift field photodetectors (LDPD); Low noise

Indexed keywords

CMOS IMAGING; HIGH SPEED IMAGING; LARGE PIXELS; LATERAL DRIFTS; LOW NOISE;

EID: 78649312112     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.03.162     Document Type: Article
Times cited : (23)

References (13)
  • 8
    • 78649267683 scopus 로고    scopus 로고
    • Characterization of pixel response time and image lag in CMOS sensors
    • Motorola Inc. Chandler, AZ
    • S. Ramaswami, S. Agwani, L. Loh, and N. Bossemeyer Characterization of pixel response time and image lag in CMOS sensors Image Capture Operation 2001 Motorola Inc. Chandler, AZ
    • (2001) Image Capture Operation
    • Ramaswami, S.1    Agwani, S.2    Loh, L.3    Bossemeyer, N.4
  • 10
    • 84913285673 scopus 로고
    • Semiconductor drift chamber-an application of a novel charge transport scheme
    • Grosseto, Italy, June 3-4
    • E. Gatti, P. Rehak, Semiconductor drift chamberan application of a novel charge transport scheme, in: Proceeding of the Second Pisa Meeting on Advanced Detectors, Grosseto, Italy, June 34, 1983
    • (1983) Proceeding of the Second Pisa Meeting on Advanced Detectors
    • Gatti, E.1    Rehak, P.2
  • 12


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.