Anomalous structural transformation, spontaneous polarization, piezoelectric response, and band structure of semiconductor aluminum nitride under hydrostatic pressure

Journal of Applied Physics

Volumn 110, Issue 10, 2011, Pages

  Duan, Yifeng ^a   Qin, Lixia ^a   Shi, Liwei ^a   Tang, Gang ^a   Shi, Hongliang ^b  

^a CHINA UNIVERSITY OF MINING AND TECHNOLOGY   (China)

^b BEIJING COMPUTATIONAL SCIENCE RESEARCH CENTER   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS BEHAVIOR; APPLIED PRESSURE; BANDGAP TRANSITION; CONDUCTION STATE; CONDUCTION-BAND MINIMUM; FIRST-PRINCIPLES CALCULATION; IN-PLANE STRAINS; K POINTS; MAXIMUM VALUES; NON-POLAR; PARAELECTRIC PHASIS; PIEZOELECTRIC RESPONSE; POLAR AXIS; PRESSURE INCREASE; RECIPROCAL LATTICE POINTS; SPONTANEOUS POLARIZATIONS; STRUCTURAL PHASE TRANSITION; STRUCTURAL TRANSFORMATION; STRUCTURAL TRANSITIONS; VALENCE-BAND MAXIMUMS; WURTZITE PHASE; WURTZITE STRUCTURE;

ALUMINUM; ALUMINUM NITRIDE; CALCULATIONS; ENERGY GAP; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; MATERIALS PROPERTIES; NITRIDES; PEROVSKITE; PHASE TRANSITIONS; PIEZOELECTRICITY; POLARIZATION; ZINC SULFIDE;

BEHAVIORAL RESEARCH;

EID: 82555163316     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3662031     Document Type: Conference Paper

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