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Volumn 84, Issue 18, 2011, Pages

Pressure-induced metallization of BaMn2As2

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EID: 82455220902     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.180515     Document Type: Article
Times cited : (61)

References (20)
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    • PRBMDO 1098-0121 10.1103/PhysRevB.84.014405
    • Abhishek Pandey, V. K. Anand, and D. C. Johnston, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.84.014405 84, 014405 (2011).
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    • Improved thermoelectric properties due to electronic topological transition under high pressure
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    • N. V. Chandra Shekar, D. A. Polvani, J. F. Meng, and J. V. Badding, Physica B 0921-4526 10.1016/j.physb.2004.12.020 358, 14 (2005). (Pubitemid 40391505)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.