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Volumn 79, Issue 7, 2009, Pages

Electronic structure and magnetism in BaMn2 As2 and BaMn2 Sb2

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EID: 62549083522     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.075120     Document Type: Article
Times cited : (144)

References (39)
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    • This is because of the electronic contribution to thermal conductivity. In materials where the Wiedemann-Franz relation κe =LσT holds, it can be shown that ZT>1 requires S>160μV/K.
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    • Our calculated thermopowers based on the GGA electronic structure are similar except that the values at high temperatures and low doping levels are larger owing the larger GGA gap, which leads to less minority carrier conduction.
    • Our calculated thermopowers based on the GGA electronic structure are similar except that the values at high temperatures and low doping levels are larger owing the larger GGA gap, which leads to less minority carrier conduction.


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