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Volumn 364, Issue , 2012, Pages 260-265

Butane sensing property of Si-ZnO nanowires p-n junction

Author keywords

Room temperature sensing and butane gas; Si ZnO nanowires p n junction; ZnO nanowires

Indexed keywords

BORON-DOPED SILICON; DEPOSITION METHODS; GAS SENSING PROPERTIES; INITIAL STATE; P-N JUNCTION; P-TYPE; RESISTANCE CHANGE; ROOM TEMPERATURE; SENSING DEVICES; SENSING PROPERTY; SI-ZNO NANOWIRES P-N JUNCTION; ZNO NANOWIRES; ZNO NWS;

EID: 81855227110     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.364.260     Document Type: Conference Paper
Times cited : (3)

References (22)
  • 1
    • 81855162205 scopus 로고    scopus 로고
    • P.T. Mosley, B.C. Tofield. Hilger, Bristol, 1987
    • P.T. Mosley, B.C. Tofield. Hilger, Bristol, 1987.
  • 2
    • 81855162212 scopus 로고    scopus 로고
    • H.M. Shang and G.Z. Cao. Imperial College Press Publishing, Sgp., 2007
    • H.M. Shang and G.Z. Cao. Imperial College Press Publishing, Sgp. (2007).
  • 18
    • 81855162206 scopus 로고    scopus 로고
    • Dissertation, University of Maryland, Department of Electrical and Computer Engineering
    • A.A. Hasina. Dissertation, University of Maryland, Department of Electrical and Computer Engineering (2008), p.121.
    • (2008) , pp. 121
    • Hasina, A.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.