Compositional dependence of the optical parameters for Bi 5GexSe65-x (30 ≤ x ≤ 45) films

Vacuum

Volumn 86, Issue 4, 2011, Pages 351-355

  Abdel Rahim, Farid M ^a   Hafiz, M M ^b   Alsorory, H ^b  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^b Assiut University   (Egypt)

Author keywords

Amorphous films; Chalcogenide semiconductors optical properties; Refractive index

Indexed keywords

AMORPHOUS STATE; CHALCOGENIDE SEMICONDUCTORS; CHEMICAL COMPOSITIONS; CLEANED GLASS SUBSTRATES; COMPOSITION DEPENDENCE; COMPOSITIONAL DEPENDENCE; CRYSTALLINE PEAKS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; EXTINCTION COEFFICIENTS; GE CONTENT; INDIRECT TRANSITION; LOW-INTENSITY; OPTICAL ENERGY GAP; OPTICAL PARAMETER; SINGLE-OSCILLATOR MODEL; STRUCTURAL CHARACTERIZATION; THERMAL EVAPORATION METHOD;

AMORPHOUS FILMS; BISMUTH; CHEMICAL BONDS; FILM PREPARATION; GERMANIUM; OPTICAL CONSTANTS; PHASE CHANGE MEMORY; REFRACTIVE INDEX; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; THERMAL EVAPORATION; THIN FILMS; X RAY SPECTROSCOPY;

OPTICAL FILMS;

EID: 81855175333     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.07.043     Document Type: Article

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