Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects

Microelectronic Engineering

Volumn 89, Issue 1, 2012, Pages 58-61

  Jung, Sung Yup ^a   Kim, Byoung Joon ^a   Lee, Nam Yeal ^b   Kim, Baek Mann ^b   Yeom, Seung Jin ^b   Kwak, Noh Jung ^b   Joo, Young Chang ^a  

^a Seoul National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Alternating polarity; Bias temperature stress; ILD breakdown; Time dependent dielectric breakdown

Indexed keywords

ALTERNATING POLARITY; BIAS POLARITY; BIAS TEMPERATURE STRESS; CU IONS; DAMASCENE CU; DAMASCENE CU INTERCONNECTS; DAMASCENE STRUCTURE; DC STRESS; DIFFUSIONAL FLUX; DIRECT-CURRENT; FREQUENCY EFFECT; ILD BREAKDOWN; METAL INSULATORS; MIS STRUCTURE; REVERSE-BIAS; STRESS CONDITION; TIME DEPENDENT DIELECTRIC BREAKDOWN; TIME TO FAILURE;

ELECTRIC BREAKDOWN; HEAVY IONS; METAL INSULATOR BOUNDARIES; MIS DEVICES;

DIELECTRIC MATERIALS;

EID: 81855166643     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.01.070     Document Type: Conference Paper

References (9)

1. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, J. Lloyd, R. Kontra, and J. Aitken IEEE 2006 46
2. R.S. Achanta, J.L. Plawsky, and W.N. Gill J. Vac. Sci. Technol., A 26 6 2008 1497
3. S.-S. Hwang, S.-Y. Jung, and Y.-C. Joo J. Appl. Phys. 104 2008 044511
4. A.L.S. Loke, C. Ryu, C.P. Yue, James S.H. Cho, and S.S. Wong IEEE Elec. Dev. Lett. 17 12 1996 549
5. J.D. McBrayer, R.M. Swanson, and T.W. Sigmon J. Electrochem. Soc. 133 6 1986 1242
6. S.-Y. Jung, B.-J. Kim, N.-Y. Lee, B.-M. Kim, S.J. Yeom, N.J. Kwak, and Y.-C. Joo IEEE 2009 825
7. S.-S. Hwang, S.-Y. Jung, and Y.-C. Joo J. Appl. Phys. 101 2007 074501
8. B.K. Liew, N.W. Cheung, and C. Hu IEEE 1989 215
9. J.-Y. Kwon, K.-S. Kim, Y.-C. Joo, and K.-B. Kim Jpn. J. Appl. Phys. 41 2002 L99