Stress and defect induced enhanced low field magnetoresistance and dielectric constant in La0.7Sr0.3MnO3 thin films

Journal of Alloys and Compounds

Volumn 512, Issue 1, 2012, Pages 332-339

  Majumdar, Sayani ^a   Huhtinen, H ^a   Majumdar, H S ^b   Paturi, P ^a  

^a UNIVERSITY OF TURKU   (Finland)

^b ÅBO AKADEMI UNIVERSITY   (Finland)

Author keywords

Dielectric properties; Low field magnetoresistance; Manganite; Structural defects; Thin films

Indexed keywords

COLOSSAL-MAGNETORESISTIVE MANGANITES; DEPOSITED FILMS; DEPOSITION PARAMETERS; FERROMAGNETIC TRANSITIONS; HIGH DIELECTRIC CONSTANTS; LARGE LATTICE MISMATCH; LOW FIELD; LOW-FIELD MAGNETORESISTANCE; MAGNETO TRANSPORT PROPERTIES; METALLIC BEHAVIORS; MGO SINGLE CRYSTALS; MGO SUBSTRATE; POLYCRYSTALLINITY; ROOM TEMPERATURE; SINGLE CRYSTAL SUBSTRATES; SRTIO; STRAINED STRUCTURE; STRUCTURAL DEFECT; SUBSTRATE-INDUCED STRAIN;

COLOSSAL MAGNETORESISTANCE; DEFECTS; DIELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FILM GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LANTHANUM; LANTHANUM COMPOUNDS; LATTICE MISMATCH; MAGNETOELECTRONICS; MANGANESE OXIDE; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; PARAMAGNETISM; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; SINGLE CRYSTALS; SUPERCONDUCTING MATERIALS; SURFACE DEFECTS; SURFACE ROUGHNESS; THIN FILMS; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

SUBSTRATES;

EID: 80555148142     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.09.093     Document Type: Article

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